unisonic technologies co., ltd UT90N03 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-847.c 90a, 30v n-channel(d-s) power mosfet ? description the utc UT90N03 is an n-channel enhancement mode power fet, it uses utc?s advanced technology to provide customers a minimum on-state resistance. the utc UT90N03 is suitable for server and dc-dc converters. ? features * r ds(on) < 2.4m ? @ v gs =10v * improved dv/dt capability ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UT90N03l-tm3-t UT90N03g-tm3-t to-251 g d s tube UT90N03l-tn3-r UT90N03g-tn3-r to-252 g d s tape reel UT90N03l-tq2-t UT90N03g-tq2-t to-263 g d s tube UT90N03l-tq2-r UT90N03g-tq2-r to-263 g d s tape reel note: pin assignment: g: gate d: drain s: source ? marking information package marking to-251 to-252 to-263
UT90N03 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-847.c ? absolute maximum ratings (t a =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v drain current t c =25c (note 2, 5) i d 90 a t a =25c (note 3, 4) 28.8 a pulsed i dm 90 a avalanche current pulse (l=0.074mh) i as 90 a single pulsed avalanche energy (l=0.074mh) e as 300 mj continuous source-drain diode current t c =25c (note 2, 5) i s 90 a t a =25c (note 3, 4) 3.13 a power dissipation t c =25c (note 2) to-251/to-252 p d 187 w to-263 220 t a =25c (note 3, 4) 3.75 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. based on t c =25c. 3. surface mounted on 1"x1" fr4 board. 4. t=10sec. 5. calculated based on maximum junction te mperature. package limit ation current is 90a. ? thermal characteristics parameter symbol ratings unit junction to ambient (note 1, 2) t 10sec ja 40 c/w junction to case steady state to-251/to-252 jc 0.6 c/w to-263 0.5 notes: 1. maximum under steady state conditions is 90c/w. 2. surface mounted on 1" x1" fr4 board.
UT90N03 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-847.c ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1 a v ds =30v, v gs =0v, t j =55c 10 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1.5 2.5 v static drain-source on-state resistance (note 1) r ds(on) v gs =10v, i d =28.8a 2.4 2.9 m ? v gs =4.5v, i d =27a 2.7 3.3 m ? forward transconductance (note 1) g fs v ds =15v, i d =28.8a 160 s on state drain current (note 1) i d ( on ) v gs =10v, v ds 5v 90 a dynamic parameters (note 2) input capacitance c iss v gs =0v, v ds =15v, f=1.0mhz 12065 pf output capacitance c oss 1725 pf reverse transfer capacitance c rss 970 pf switching parameters total gate charge q g v ds =15v, v gs =10v, i d =28.8a 171 257 nc total gate charge q g v ds =15v, v gs =4.5v, i d =28.8a 81.5 123 nc gate to source charge q gs 34 nc gate to drain charge q gd 29 nc gate resistance r g f=1mhz 1.4 2.1 ? turn-on delay time t d ( on ) v dd =15v, r l =0.625 ? , i d =24a, v gen =10v, r g =1 ? 18 27 ns rise time t r 11 17 ns turn-off delay time t d ( off ) 70 105 ns fall-time t f 10 15 ns turn-on delay time t d ( on ) v dd =15v, r l =0.67 ? , i d =22.5a, v gen =4.5v, r g =1 ? 55 83 ns rise time t r 180 270 ns turn-off delay time t d ( off ) 55 83 ns fall-time t f 12 18 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s t c =25c 90 a maximum body-diode pulsed current (note 1) i sm 90 a drain-source diode forward voltage v sd i s =22a 0.8 1.2 v body diode reverse recovery time t rr i f =20a, di/dt=100a/s, t j =25c 52 78 ns notes: 1. pulse test: pulse width 300s, duty cycle 2%. 2. guaranteed by design, not subject to production testing.
UT90N03 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-847.c ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off
UT90N03 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-847.c ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
UT90N03 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-847.c ? typical characteristics drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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